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HAT2160H-EL-E

Renesas Electronics America Inc
HAT2160H-EL-E
MOSFET N-CH 20V 60A LFPAK
SC-100, SOT-669
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HAT2160H-EL-E
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HAT2160H-EL-E Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7750 pF @ 10 V
FET Feature -
Power Dissipation (Max) 30W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package LFPAK
Package / Case SC-100, SOT-669
3,533 In Stock
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