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RM17N800HD

Rectron USA
RM17N800HD
MOSFET N-CH 800V 17A TO263-2
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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RM17N800HD
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RM17N800HD Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 320mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2060 pF @ 50 V
FET Feature -
Power Dissipation (Max) 260W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
8,318 In Stock
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Minimum: 1
Unit Price: $1.07
Total Price: $1.07
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