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P3M173K0T3

PN Junction Semiconductor
P3M173K0T3
SICFET N-CH 1700V 4A TO-220-3
TO-220-2
Active
P3M173K0T3
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P3M173K0T3 Attributes
TYPE DESCRIPTION SELECT
Series P3M
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 4A
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 2.6Ohm @ 600mA, 15V
Vgs(th) (Max) @ Id 2.2V @ 600µA (Typ)
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 75W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-2L
Package / Case TO-220-2
440 In Stock
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Minimum: 1
Unit Price: $3.56
Total Price: $3.56
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