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P3M06300K3

PN Junction Semiconductor
P3M06300K3
SICFET N-CH 650V 9A TO-247-3
TO-247-3
Active
P3M06300K3
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P3M06300K3 Attributes
TYPE DESCRIPTION SELECT
Series P3M
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 9A
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 500mOhm @ 4.5A, 15V
Vgs(th) (Max) @ Id 2.2V @ 5mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 904 nC @ 15 V
Vgs (Max) +20V, -8V
Input Capacitance (Ciss) (Max) @ Vds 338 pF @ 400 V
FET Feature -
Power Dissipation (Max) 38W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3L
Package / Case TO-247-3
5,294 In Stock
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Unit Price: $3.49
Total Price: $3.49
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