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P3M06300D8

PN Junction Semiconductor
P3M06300D8
SICFET N-CH 650V 9A DFN8*8
DFN8*8
Active
P3M06300D8
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P3M06300D8 Attributes
TYPE DESCRIPTION SELECT
Series P3M
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 9A
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 500mOhm @ 4.5A, 15V
Vgs(th) (Max) @ Id 2.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) +20V, -8V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 32W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN8*8
Package / Case DFN8*8
3,986 In Stock
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Unit Price: $3.49
Total Price: $3.49
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