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P3M06025K4

PN Junction Semiconductor
P3M06025K4
SICFET N-CH 650V 97A TO247-4
TO-247-4
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P3M06025K4
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P3M06025K4 Attributes
TYPE DESCRIPTION SELECT
Series P3M
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 97A
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 34mOhm @ 50A, 15V
Vgs(th) (Max) @ Id 2.2V @ 50mA (Typ)
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) +20V, -8V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 326W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
4,705 In Stock
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Unit Price: $11.13
Total Price: $11.13
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