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PJQ1916_R1_00001
Panjit International Inc.
PJQ1916_R1_00001
20V N-CHANNEL ENHANCEMENT MODE M
3-UFDFN
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PJQ1916_R1_00001 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 20 V | |
Current - Continuous Drain (Id) @ 25°C | 950mA (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V | |
Rds On (Max) @ Id, Vgs | 300mOhm @ 500mA, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 1.1 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 46 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 500mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | DFN1006-3 | |
Package / Case | 3-UFDFN |
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