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PCP1302-TD-H

onsemi
PCP1302-TD-H
MOSFET P-CH 60V 3A SOT89/PCP-1
TO-243AA
Active
PCP1302-TD-H
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PCP1302-TD-H Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 266mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 262 pF @ 20 V
FET Feature -
Power Dissipation (Max) 3.5W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-89/PCP-1
Package / Case TO-243AA
1,607 In Stock
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