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NVD6416ANLT4G
onsemi
NVD6416ANLT4G
MOSFET N-CH 100V 19A DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
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NVD6416ANLT4G Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 19A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 71W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Grade | Automotive | |
| Qualification | AEC-Q101 | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | DPAK-3 | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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