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NVD5117PLT4G
onsemi
NVD5117PLT4G
MOSFET P-CH 60V 11A/61A DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
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NVD5117PLT4G Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 61A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 29A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 4.1W (Ta), 118W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Grade | Automotive | |
| Qualification | AEC-Q101 | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | DPAK | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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