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NTZS3151PT5G

onsemi
NTZS3151PT5G
MOSFET P-CH 20V 860MA SOT563
SOT-563, SOT-666
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NTZS3151PT5G
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NTZS3151PT5G Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 860mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 150mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 458 pF @ 16 V
FET Feature -
Power Dissipation (Max) 170mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-563
Package / Case SOT-563, SOT-666
3,939 In Stock
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