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NTMSD2P102LR2
onsemi
NTMSD2P102LR2
MOSFET P-CH 20V 2.3A 8SOIC
8-SOIC (0.154", 3.90mm Width)
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NTMSD2P102LR2 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | FETKY™ | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.4A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V | |
| Vgs (Max) | ±10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 16 V | |
| FET Feature | Schottky Diode (Isolated) | |
| Power Dissipation (Max) | 710mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SOIC | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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