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NTGD4161PT1G
onsemi
NTGD4161PT1G
MOSFET 2P-CH 30V 1.5A 6TSOP
SOT-23-6 Thin, TSOT-23-6
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NTGD4161PT1G Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Technology | MOSFET (Metal Oxide) | |
Configuration | 2 P-Channel (Dual) | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 30V | |
Current - Continuous Drain (Id) @ 25°C | 1.5A | |
Rds On (Max) @ Id, Vgs | 160mOhm @ 2.1A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 7.1nC @ 10V | |
Input Capacitance (Ciss) (Max) @ Vds | 281pF @ 15V | |
Power - Max | 600mW | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
Supplier Device Package | 6-TSOP |
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