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NTD4963NT4G

onsemi
NTD4963NT4G
MOSFET N-CH 30V 8.1A/44A DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
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NTD4963NT4G
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NTD4963NT4G Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8.1A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1035 pF @ 12 V
FET Feature -
Power Dissipation (Max) 1.1W (Ta), 35.7W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
2,434 In Stock
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