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NTD4857N-35G

onsemi
NTD4857N-35G
MOSFET N-CH 25V 12A/78A IPAK
TO-251-3 Stub Leads, IPak
Active
NTD4857N-35G
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NTD4857N-35G Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 12 V
FET Feature -
Power Dissipation (Max) 1.31W (Ta), 56.6W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package I-Pak
Package / Case TO-251-3 Stub Leads, IPak
3,070 In Stock
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Minimum: 1
Unit Price: N/A
Total Price: N/A
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