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NTD4815N-1G

onsemi
NTD4815N-1G
MOSFET N-CH 30V 6.9A/35A IPAK
TO-251-3 Short Leads, IPak, TO-251AA
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NTD4815N-1G
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NTD4815N-1G Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 6.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 15mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.6 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 770 pF @ 12 V
FET Feature -
Power Dissipation (Max) 1.26W (Ta), 32.6W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
6,387 In Stock
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