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NDS9953A

onsemi
NDS9953A
MOSFET 2P-CH 30V 2.9A 8SOIC
8-SOIC (0.154", 3.90mm Width)
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NDS9953A
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NDS9953A Attributes
TYPE DESCRIPTION SELECT
Series -
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.9A
Rds On (Max) @ Id, Vgs 130mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 10V
Power - Max 900mW
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
5,699 In Stock
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