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NDP6020P

onsemi
NDP6020P
MOSFET P-CH 20V 24A TO220-3
TO-220-3
Active
NDP6020P
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NDP6020P Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Max) @ Id, Vgs 50mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1590 pF @ 10 V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Operating Temperature -65°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
4,530 In Stock
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