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NDC632P
onsemi
NDC632P
MOSFET P-CH 20V 2.7A SUPERSOT6
SOT-23-6 Thin, TSOT-23-6
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NDC632P Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 2.7A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V | |
| Vgs (Max) | -8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 10 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.6W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SuperSOT™-6 | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
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