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MTD6P10E

onsemi
MTD6P10E
MOSFET P-CH 100V 6A DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
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MTD6P10E
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MTD6P10E Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 660mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.75W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
2,666 In Stock
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