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MTD6N20ET4

onsemi
MTD6N20ET4
MOSFET N-CH 200V 6A DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
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MTD6N20ET4
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MTD6N20ET4 Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 700mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 25 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
1,563 In Stock
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