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MMFT2N02ELT1

onsemi
MMFT2N02ELT1
MOSFET N-CH 20V 1.6A SOT223
TO-261-4, TO-261AA
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MMFT2N02ELT1
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MMFT2N02ELT1 Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 150mOhm @ 800mA, 5V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 5 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 580 pF @ 15 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA
7,558 In Stock
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