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MJD112-001
onsemi
MJD112-001
TRANS NPN DARL 100V 2A IPAK
TO-251-3 Short Leads, IPak, TO-251AA
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MJD112-001 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Transistor Type | NPN - Darlington | |
| Current - Collector (Ic) (Max) | 2 A | |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A | |
| Current - Collector Cutoff (Max) | 20µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V | |
| Power - Max | 1.75 W | |
| Frequency - Transition | 25MHz | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Supplier Device Package | I-PAK |
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