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HGTP5N120BND
onsemi
HGTP5N120BND
IGBT 1200V 21A 167W TO220AB
TO-220-3
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HGTP5N120BND Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
IGBT Type | NPT | |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
Current - Collector (Ic) (Max) | 21 A | |
Current - Collector Pulsed (Icm) | 40 A | |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 5A | |
Power - Max | 167 W | |
Switching Energy | 450µJ (on), 390µJ (off) | |
Input Type | Standard | |
Gate Charge | 53 nC | |
Td (on/off) @ 25°C | 22ns/160ns | |
Test Condition | 960V, 5A, 25Ohm, 15V | |
Reverse Recovery Time (trr) | 65 ns | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Package / Case | TO-220-3 | |
Supplier Device Package | TO-220-3 |
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