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FQPF2N60C

onsemi
FQPF2N60C
MOSFET N-CH 600V 2A TO220F
TO-220-3 Full Pack
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FQPF2N60C
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FQPF2N60C Attributes
TYPE DESCRIPTION SELECT
Series QFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 235 pF @ 25 V
FET Feature -
Power Dissipation (Max) 23W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package / Case TO-220-3 Full Pack
3,548 In Stock
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Minimum: 1
Unit Price: N/A
Total Price: N/A
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