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FQP50N06

onsemi
FQP50N06
MOSFET N-CH 60V 50A TO220-3
TO-220-3
Active
FQP50N06
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FQP50N06 Attributes
TYPE DESCRIPTION SELECT
Series QFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1540 pF @ 25 V
FET Feature -
Power Dissipation (Max) 120W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
5,475 In Stock
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