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FQA28N50F

onsemi
FQA28N50F
MOSFET N-CH 500V 28.4A TO3P
TO-3P-3, SC-65-3
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FQA28N50F
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FQA28N50F Attributes
TYPE DESCRIPTION SELECT
Series FRFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 28.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 14.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 5600 pF @ 25 V
FET Feature -
Power Dissipation (Max) 310W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
2,519 In Stock
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