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FGA50N100BNTD2
onsemi
FGA50N100BNTD2
IGBT 1000V 50A 156W TO3P
TO-3P-3, SC-65-3
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FGA50N100BNTD2 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| IGBT Type | NPT and Trench | |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V | |
| Current - Collector (Ic) (Max) | 50 A | |
| Current - Collector Pulsed (Icm) | 200 A | |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A | |
| Power - Max | 156 W | |
| Switching Energy | - | |
| Input Type | Standard | |
| Gate Charge | 257 nC | |
| Td (on/off) @ 25°C | 34ns/243ns | |
| Test Condition | 600V, 60A, 10Ohm, 15V | |
| Reverse Recovery Time (trr) | 75 ns | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Supplier Device Package | TO-3P |
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