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FDV303N-F169

onsemi
FDV303N-F169
MOSFET N-CH 25V 680MA SOT23
TO-236-3, SC-59, SOT-23-3
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FDV303N-F169
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FDV303N-F169 Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.3 nC @ 4.5 V
Vgs (Max) 8V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V
FET Feature -
Power Dissipation (Max) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
5,175 In Stock
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