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FDG6302P

onsemi
FDG6302P
MOSFET 2P-CH 25V 0.14A SC88
6-TSSOP, SC-88, SOT-363
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FDG6302P
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FDG6302P Attributes
TYPE DESCRIPTION SELECT
Series -
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 140mA
Rds On (Max) @ Id, Vgs 10Ohm @ 140mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.31nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 12pF @ 10V
Power - Max 300mW
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88 (SC-70-6)
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