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FDFMA2P853T

onsemi
FDFMA2P853T
MOSFET P-CH 20V 3A MICROFET
8-SOIC (0.154", 3.90mm Width), 7 Leads
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FDFMA2P853T
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FDFMA2P853T Attributes
TYPE DESCRIPTION SELECT
Series PowerTrench®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 120mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 435 pF @ 10 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 7-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width), 7 Leads
5,994 In Stock
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