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EFC6602R-TR
onsemi
EFC6602R-TR
MOSFET 2N-CH EFCP
6-XFBGA, FCBGA
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EFC6602R-TR Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | MOSFET (Metal Oxide) | |
| Configuration | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate, 2.5V Drive | |
| Drain to Source Voltage (Vdss) | - | |
| Current - Continuous Drain (Id) @ 25°C | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Power - Max | 2W | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-XFBGA, FCBGA | |
| Supplier Device Package | EFCP2718-6CE-020 |
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