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EFC3C001NUZTCG

onsemi
EFC3C001NUZTCG
MOSFET 2 N-CHANNEL 4WLCSP
4-XFBGA, WLCSP
Active
EFC3C001NUZTCG
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EFC3C001NUZTCG Attributes
TYPE DESCRIPTION SELECT
Series -
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss) -
Current - Continuous Drain (Id) @ 25°C -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.6W
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 4-XFBGA, WLCSP
Supplier Device Package 4-WLCSP (1.26x1.26)
8,605 In Stock
rhos iso9001 iso13485 iso14001 iso45001
Minimum: 1
Unit Price: $0.08
Total Price: $0.08
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