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2SK4125-1E

onsemi
2SK4125-1E
MOSFET N-CH 600V 17A TO3P-3L
TO-3P-3, SC-65-3
Active
2SK4125-1E
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2SK4125-1E Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 610mOhm @ 7A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 30 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 170W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-3P-3L
Package / Case TO-3P-3, SC-65-3
4,961 In Stock
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