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2N7000G

onsemi
2N7000G
MOSFET N-CH 60V 200MA TO92-3
TO-226-3, TO-92-3 Long Body
Active
2N7000G
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2N7000G Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V
FET Feature -
Power Dissipation (Max) 350mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-92 (TO-226)
Package / Case TO-226-3, TO-92-3 Long Body
8,840 In Stock
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