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PMF280UN,115

NXP USA Inc.
PMF280UN,115
MOSFET N-CH 20V 1.02A SOT323-3
SC-70, SOT-323
Active
PMF280UN,115
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PMF280UN,115 Attributes
TYPE DESCRIPTION SELECT
Series TrenchMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 1.02A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 340mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.89 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 45 pF @ 20 V
FET Feature -
Power Dissipation (Max) 560mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SC-70
Package / Case SC-70, SOT-323
7,795 In Stock
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