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PHT4NQ10LT,135
NXP USA Inc.
PHT4NQ10LT,135
MOSFET N-CH 100V 3.5A SOT223
TO-261-4, TO-261AA
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PHT4NQ10LT,135 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | TrenchMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V | |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1.75A, 5V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 12.2 nC @ 5 V | |
| Vgs (Max) | ±16V | |
| Input Capacitance (Ciss) (Max) @ Vds | 374 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 6.9W (Tc) | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SC-73 | |
| Package / Case | TO-261-4, TO-261AA |
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