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PDTC123YE,115
NXP USA Inc.
PDTC123YE,115
TRANS PREBIAS NPN 150MW SC75
SC-75, SOT-416
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PDTC123YE,115 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Transistor Type | NPN - Pre-Biased | |
Current - Collector (Ic) (Max) | 100 mA | |
Voltage - Collector Emitter Breakdown (Max) | 50 V | |
Resistor - Base (R1) | 2.2 kOhms | |
Resistor - Emitter Base (R2) | 10 kOhms | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA | |
Current - Collector Cutoff (Max) | 1µA | |
Frequency - Transition | - | |
Power - Max | 150 mW | |
Mounting Type | Surface Mount | |
Package / Case | SC-75, SOT-416 | |
Supplier Device Package | SC-75 |
1,141
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$0.02
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$0.02
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