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BC807-25QAZ
NXP USA Inc.
BC807-25QAZ
BC807-25QA - 45 V, 500 MA PNP GE
3-XDFN Exposed Pad
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BC807-25QAZ Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Transistor Type | PNP | |
| Current - Collector (Ic) (Max) | 500 mA | |
| Voltage - Collector Emitter Breakdown (Max) | 45 V | |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 1V | |
| Power - Max | 900 mW | |
| Frequency - Transition | 80MHz | |
| Operating Temperature | 150°C (TJ) | |
| Grade | Automotive | |
| Qualification | AEC-Q101 | |
| Mounting Type | Surface Mount | |
| Package / Case | 3-XDFN Exposed Pad | |
| Supplier Device Package | DFN1010D-3 |
992
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Minimum: 1
Unit Price:
$0.03
Total Price:
$0.03
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