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BC557C,112
NXP USA Inc.
BC557C,112
BJT TO92 45V 100MA PNP 0.5W 150C
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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BC557C,112 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Transistor Type | PNP | |
| Current - Collector (Ic) (Max) | 100 mA | |
| Voltage - Collector Emitter Breakdown (Max) | 45 V | |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA | |
| Current - Collector Cutoff (Max) | 15nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V | |
| Power - Max | 500 mW | |
| Frequency - Transition | 100MHz | |
| Operating Temperature | 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| Supplier Device Package | TO-92-3 |
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