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BAS116T,115
NXP USA Inc.
BAS116T,115
DIODE GEN PURP 75V 215MA SC75
SC-75, SOT-416
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BAS116T,115 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 75 V | |
| Current - Average Rectified (Io) | 215mA | |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 3 µs | |
| Current - Reverse Leakage @ Vr | 5 nA @ 75 V | |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-75, SOT-416 | |
| Supplier Device Package | SC-75 | |
| Operating Temperature - Junction | 150°C (Max) |
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