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PMV100XPEA215

NXP Semiconductors
PMV100XPEA215
NEXPERIA PMV100 - P-CHANNEL MOSF
TO-236-3, SC-59, SOT-23-3
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PMV100XPEA215
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PMV100XPEA215 Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 128mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 386 pF @ 10 V
FET Feature -
Power Dissipation (Max) 463mW (Ta), 4.45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
3,215 In Stock
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Minimum: 1
Unit Price: $0.03
Total Price: $0.03
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