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PDTC115EMB,315
NXP Semiconductors
PDTC115EMB,315
TRANS PREBIAS NPN 50V 0.02A 3DFN
SC-101, SOT-883
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PDTC115EMB,315 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Transistor Type | NPN - Pre-Biased | |
| Current - Collector (Ic) (Max) | 20 mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | |
| Resistor - Base (R1) | 100 kOhms | |
| Resistor - Emitter Base (R2) | 100 kOhms | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA | |
| Current - Collector Cutoff (Max) | 1µA | |
| Frequency - Transition | 230 MHz | |
| Power - Max | 250 mW | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-101, SOT-883 | |
| Supplier Device Package | DFN1006B-3 |
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