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NC1M120C75RRNG

NextGen Components
NC1M120C75RRNG
SiC MOSFET N 1200V 75mohm 46A 7
TO-263-8, DPak (7 Leads + Tab)
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NC1M120C75RRNG
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NC1M120C75RRNG Attributes
TYPE DESCRIPTION SELECT
Series NC1M
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 75mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 2.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) +18V, -5V
Input Capacitance (Ciss) (Max) @ Vds 1402 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 240W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263-7L
Package / Case TO-263-8, DPak (7 Leads + Tab)
3,288 In Stock
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Minimum: 1
Unit Price: $18.10
Total Price: $18.10
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