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NC1M120C75HTNG
NextGen Components
NC1M120C75HTNG
SiC MOSFET N 1200V 75mohm 47A 4
TO-247-4
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NC1M120C75HTNG Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | NC1M | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 20A, 20V | |
| Vgs(th) (Max) @ Id | 2.8V @ 5mA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | +20V, -5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 1000 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 288W (Ta) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247-4L | |
| Package / Case | TO-247-4 |
6,952
In Stock
Minimum: 1
Unit Price:
$18.80
Total Price:
$18.80
This price is for reference only, please contact us for now price support@easev.net.
