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NC1M120C12HTNG
NextGen Components
NC1M120C12HTNG
SiC MOSFET N 1200V 12mohm 214A
TO-247-4
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NC1M120C12HTNG Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | NC1M | |
FET Type | N-Channel | |
Technology | SiCFET (Silicon Carbide) | |
Drain to Source Voltage (Vdss) | 1200 V | |
Current - Continuous Drain (Id) @ 25°C | 214A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 20V | |
Rds On (Max) @ Id, Vgs | 20mOhm @ 100A, 20V | |
Vgs(th) (Max) @ Id | 3.5V @ 40mA | |
Gate Charge (Qg) (Max) @ Vgs | - | |
Vgs (Max) | +20V, -5V | |
Input Capacitance (Ciss) (Max) @ Vds | 8330 pF @ 1000 V | |
FET Feature | - | |
Power Dissipation (Max) | 938W (Ta) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247-4L | |
Package / Case | TO-247-4 |
2,462
In Stock
Minimum: 1
Unit Price:
$60.80
Total Price:
$60.80
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