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BSH114,215

Nexperia USA Inc.
BSH114,215
MOSFET N-CH 100V 500MA TO236AB
TO-236-3, SC-59, SOT-23-3
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BSH114,215
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BSH114,215 Attributes
TYPE DESCRIPTION SELECT
Series TrenchMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 4.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 138 pF @ 25 V
FET Feature -
Power Dissipation (Max) 360mW (Ta), 830mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
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