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NDD57N160
Naina Semiconductor Ltd.
NDD57N160
DIODE MODULE GP 1600V 60A
Module
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NDD57N160 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Diode Configuration | 1 Pair Series Connection | |
| Technology | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 1600 V | |
| Current - Average Rectified (Io) (per Diode) | 60A | |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 60 A | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 4 mA @ 1.6 kV | |
| Operating Temperature - Junction | -40°C ~ 125°C | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Supplier Device Package | Module |
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