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MRF581G
Microsemi Corporation
MRF581G
RF TRANS NPN 18V 5GHZ MICRO X
Micro-X ceramic (84C)
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MRF581G Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Transistor Type | NPN | |
Voltage - Collector Emitter Breakdown (Max) | 18V | |
Frequency - Transition | 5GHz | |
Noise Figure (dB Typ @ f) | 3dB ~ 3.5dB @ 500MHz | |
Gain | 13dB ~ 15.5dB | |
Power - Max | 1.25W | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 5V | |
Current - Collector (Ic) (Max) | 200mA | |
Operating Temperature | 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Package / Case | Micro-X ceramic (84C) | |
Supplier Device Package | Micro-X ceramic (84C) |
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