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JANTXV2N6796

Microsemi Corporation
JANTXV2N6796
MOSFET N-CH 100V 8A TO205AF
TO-205AF Metal Can
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JANTXV2N6796
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JANTXV2N6796 Attributes
TYPE DESCRIPTION SELECT
Series Military, MIL-PRF-19500/557
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 195mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28.51 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 800mW (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-205AF (TO-39)
Package / Case TO-205AF Metal Can
7,651 In Stock
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